姓 名：杜汇伟
工作部门：星空体育平台app
性 别：男
技术职称：讲师
最高学位：博士
民 族：汉
籍 贯：山西高平
联系方式：
Email: duhw@cjlu.edu.cn
电 话：
主要研究方向：
光伏和储能材料及器件，主要包括透明导电氧化物薄膜、碳纳米材料、硅基异质结太阳电池、锂离子电池和锂硫电池等。
学习和工作经历：
2005.09 - 2009.07 山西大学 物理与电子工程学院 物理学（国家基地）学士学位；
2009.09 - 2012.06 上海大学 理学院物理系 凝聚态物理 硕士学位（马忠权 教授）；
2012.09 - 2015.12 上海大学 理学院物理系 凝聚态物理 博士学位（马忠权 教授）；
2016.05 - 2018.10 中山大学 光电材料与技术国家重点实验室 光学工程 科研博士后（陈军 教授，桂许春 教授）；
2018.10 -至今 中国计量大学 星空体育平台app 讲师。
研究（情况）项目：
1. 硫化锌/石墨烯基纳米核壳复相结构的制备与锂离子导向电迁移特征研究，浙江省工艺研究计划项目青年探索项目，批号：LQ20E070003（主持），2020年；
2. 具有周期性褶皱的石墨烯的构筑及其在力学传感中的应用探索，国家自然科学基金面上项目，批号：51772335（参与2），2018年
发表的论文、专著、教材：
1. H. W. Du, X. C. Gui, R. L. Yang, Z. Q. Lin, B. H. Liang, W. J. Chen, Y. J. Zheng, H. Zhu, and J. Chen, In-situ sulfur loading in graphene-like nano-cell by template-free method for Li–S batteries, Nanoscale, 10, 3877 (2018)；
2. H. W. Du, X. C. Gui, R. L. Yang, H. Zhang, Z. Q. Lin, B. H. Liang, W. J. Chen, H. Zhu, and J. Chen, ZnS nanoparticles coated with graphene-like nano-cell as anode materials for high rate capability lithium-ion batteries, Journal of Mateirals Science, 53, 14619-14628 (2018);
3. H. W. Du, J. Yang, M. Gao, Y. Li, Y. Z. Wan, F. Xu, and Z. Q. Ma, The bifunctional tin-doped indium oxide as hole-selective contact and collector in silicon heterojunction solar cell with a stable intermediate oxide layer, Solar Energy, 155, 963-970 (2017);
4. H. W. Du, J. Yang, Y. H. Li, F. Xu, J. Xu, and Z. Q. Ma, Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering, Applied Physics Letters, 106, 093508 (2015);
5. H. W. Du, J. Yang, Y. Li, M. Gao, S. M. Chen, Z. S. Yu, F. Xu and Z. Q. Ma, Low temperature characteristic of ITO/SiOx/c-Si heterojunction solar cell, Journal of Physics D: Applied Physics 48, 355101 (2015);
6. H. W. Du, J. Yang, F. Xu, L. Zhao, and Z. Q. Ma，Tunneling effect of photon-assisted AZO/SiOx/n-Si heterojunction device at reverse bias，Advanced Material Letters, 7, 100-105 (2016);
7. Z. Q. Ma*, H. W. Du, J. Yang, M. Gao, S. M. Chen and Y. Z. Wan，Realization of both high efficiency and quantum tunneling in QM-SIS solar cells, Materials Today: Proceedings, 3, 454-458 (2016);
8. R. L. Yang, H. W. Du, Z. Q. Lin, L. L. Yang, H. Zhu, H, Zhang, Z. K. Tang, X. C. Gui, ZnO nanoparticles filled tetrapod-shaped carbon shell for lithium-sulfur batteries, Carbon, 141, 258-265 (2019)
9. K. J. Wu, M. Gao, H. W. Du, D. Y. Chen, L. Zhao, Z. Q. Ma, Improvement of the performance of ITO/a-SiOx/n-Si device by controllable sputtering power and reducible interface states, Materials Science in Semiconductor Processing, 105, 104702 (2020)
10. B. H. Liang, W. J. Chen, Z. F. He, R. L. Yang, Z. Q. Lin, H. W. Du, Y. Y. Shang, A. Y. Cao, Z. K. Tang, and X. C. Gui, Highly Sensitive, Flexible MEMS Based Pressure Sensor with Photoresist Insulation Layer, Small, 13, 44, (2017)；
11. Y. J. Zheng, Z. Q. Lin, W. J. Chen, B. H. Liang, H. W. Du, R. L. Yang, X. F. He, Z. K. Tang and X. C. Gui, Flexible, sandwich-like CNTs/NiCo2O4 hybrid paper electrodes for all-solid-state supercapacitors, Journal of Materials Chemistry A, 5, 5886 (2017);
12. Y. Z. Wan, M. Gao, Y. Li, H. W. Du, Y. H. Li, H. B. Guo, F. Xu and Z. Q. Ma, Potentiality of delocalized states in indium-involved amorphous silicon oxide, Applied Physics Letters, 110, 213902 (2017);
13. Y. Li, B. C. Han, M. Gao, Y. Z. Wan, J. Yang, H. W. Du, and Z. Q. Ma, A concise way to estimate the average density of interface states in an ITO/SiOx/n-Si heterojunction solar cell, Applied Surface Science. 416, 432-438 (2017)；
14. M. Gao, H. W. Du, J. Yang, L. Zhao, J. Xu, and Z. Q. Ma, Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system, Chinese Physics B 26, 045201 (2017)；
15. Y. Li, M. Gao, Y. Z. Wan, H. W. Du, S. M. Chen, and Z. Q. Ma. The high frequency tunnel capacitance overload phenomenon of semiconductor-insulator- semiconductor heterojunction caused by the ultra-thin interfacial layers, Chinese Science Bulletin, 62, 3385-3391 (2017);
16. J. Yang, H. W. Du, Yong Li, et al, Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se2 solar cells, AIP ADVANCES, 6, 085215 (2016);
17. S. M. Chen, M. Gao, Y. Z. Wan, H. W. Du, Y. Li, and Z. Q. Ma, Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region, Applied Surface Science, 388, 57-63 (2016);
18. L. Shen, H. W. Du, J. Yang and Z. Q. Ma, Optimized broad band and quasi-omnidirectional anti-reflection properties with moth-eye structures by low cost replica molding, Applied Surface Science, 325, 100–104 (2015);
19. J. Yang, H. W. Du, D. S. Chen, F. Xu, P. H. Zhou, J. Xu and Z. Q. Ma, Analysis of recombination path for Cu(In,Ga)Se2 solar cells through luminescence, Materials Letters, 145, 236–238 (2015);
20. S. M. Chen, M. Gao, R. N. Cao, H. W. Du, J. Yang, L. Zhao, and Z. Q. Ma, Hydrogen-free synthesis of graphene–graphitic films directly on Si substrate by plasma enhanced chemical vapor deposition, J Mater Sci: Mater Electron, 26, 1485–1493 (2015);
21. D. S. Chen, J. Yang, Z. B. Yang, F. Xu, H. W. Du and Z. Q. Ma, Improvement of band gap profile in CIGS solar cells through rapid thermal annealing, Materials Research Bulletin, 54, 48-53 (2014).
22. D. S. Chen, J. Yang, F. Xu, P. H. Zhou, H. W. Du, J. W. Shi, Z. S. Yu, Y. H. Zhang, B. Bartholomeusz, and Z. Q. Ma, Performance improvement of CdS/Cu(In,Ga)Se2 solar cells after Rapid Thermal Annealing, Chinese Physics B, 22, 018801 (2013);
23. D. S. Chen, J. Yang, F. Xu, P. H. Zhou, H. W. Du, J. W. Shi, Z. S. Yu, Y. H. Zhang, Brian Bartholomeusz, Z. Q. Ma, Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se2 solar cells by XPS, Applied Surface Science, 264, 459-463 (2013);
24. 杜汇伟，沈玲，丁虎，杨洁，赵磊，马忠权，超薄SiO2层的化合态结构和厚度分析，材料研究学报, 2012, 26, 461-466
25. 高明, 杜汇伟, 杨洁, 陈姝敏, 徐静, 马忠权, 磁控溅射工艺引起硅表面超薄钝化层电子结构变化, 科学通报, 2015, 60, 1841–1848
科研成果及专利：
1.国家发明专利：硅基SIS 结构旁路二极管和HIT太阳电池的器件集成方法，专利号：ZL201511004294.6 排名 2
研究生培养等教学情况：
1.在读研究生4人，
奖励和荣誉：
1. 2015年5月 全国博士生年会优秀论文奖（广州）；
2. 2020年12月，第五届中国创新挑战赛（浙江）新材料行业现场赛三等奖（2/6）。
其它：
